Gate-Emitter Leakage Current :100 nA
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :24 A
Pd - Power Dissipation :110 W
Collector- Emitter Voltage VCEO Max :600 V
Package / Case :TO-220-3
Maximum Operating Temperature :+ 175 C
Maximum Gate Emitter Voltage :20 V
Packaging :Tube
Configuration :Single
Collector-Emitter Saturation Voltage :1.8 V
Manufacturer :Infineon Technologies
Description :IGBT Transistors LOW LOSS DuoPack 600V 10A
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