Gate-Emitter Leakage Current :+/- 100 nA
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :6 A
Pd - Power Dissipation :25 W
Collector- Emitter Voltage VCEO Max :1200 V
Package / Case :TO-220-3 FP
Maximum Operating Temperature :+ 150 C
Maximum Gate Emitter Voltage :+/- 20 V
Packaging :Tube
Configuration :Single
Collector-Emitter Saturation Voltage :2.8 V
Manufacturer :STMicroelectronics
Description :IGBT Transistors N-Ch 1200 Volt 3 Amp
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