Transistor Polarity :N-Channel
Technology :Si
Product Category :MOSFET
Mounting Style :Through Hole
Package / Case :TO-220-3
Vds - Drain-Source Breakdown Voltage :500 V
Packaging :Tube
Vgs th - Gate-Source Threshold Voltage :4 V
Id - Continuous Drain Current :13.86 A
Rds On - Drain-Source Resistance :130 mOhms
Number of Channels :1 Channel
Vgs - Gate-Source Voltage :25 V
Qg - Gate Charge :62.5 nC
Manufacturer :STMicroelectronics
Description :MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET
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