Transistor Polarity  :N-Channel                                        
                                                                            
                                            Technology  :Si                                        
                                                                            
                                            Id - Continuous Drain Current  :40 A                                        
                                                                            
                                            Mounting Style  :Through Hole                                        
                                                                            
                                            Tradename  :HiPerFET                                        
                                                                            
                                            Minimum Operating Temperature  :- 55 C                                        
                                                                            
                                            Package / Case  :TO-247-3                                        
                                                                            
                                            Maximum Operating Temperature  :+ 150 C                                        
                                                                            
                                            Channel Mode  :Enhancement                                        
                                                                            
                                            Vds - Drain-Source Breakdown Voltage  :850 V                                        
                                                                            
                                            Packaging  :Tube                                        
                                                                            
                                            Vgs th - Gate-Source Threshold Voltage  :3.5 V                                        
                                                                            
                                            Product Category  :MOSFET                                        
                                                                            
                                            Rds On - Drain-Source Resistance  :145 mOhms                                        
                                                                            
                                            Number of Channels  :1 Channel                                        
                                                                            
                                            Vgs - Gate-Source Voltage  :+/- 30 V                                        
                                                                            
                                            Qg - Gate Charge  :98 nC                                        
                                                                            
                                            Manufacturer  :IXYS                                        
                                                                            
                                            Description :MOSFET 850V Ultra Junction X-Class Pwr MOSFET                                        
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