Product Category :MOSFET
Vgs (Max) :±20V
Current - Continuous Drain (Id) @ 25°C :11A (Ta), 35A (Tc)
FET Type :N-Channel
Mounting Type :Surface Mount
Gate Charge (Qg) (Max) @ Vgs :12nC @ 4.5V
Manufacturer :Infineon Technologies
Minimum Quantity :4800
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Operating Temperature :-55°C ~ 175°C (TJ)
FET Feature :-
Series :HEXFET®
Input Capacitance (Ciss) (Max) @ Vds :1140pF @ 15V
Supplier Device Package :DIRECTFET S1
Part Status :Obsolete
Packaging :Tape & Reel (TR)
Rds On (Max) @ Id, Vgs :8 mOhm @ 11A, 10V
Power Dissipation (Max) :1.7W (Ta), 17W (Tc)
Package / Case :DirectFET™ Isometric S1
Technology :MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :2.35V @ 25µA
Drain to Source Voltage (Vdss) :30V
Description :MOSFET N-CH 30V 11A DIRECTFET-S1
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