Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.2V @ 250µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs :60 nC @ 4.5 V
Rds On (Max) @ Id, Vgs :0.94mOhm @ 20A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss) :30 V
Vgs (Max) :+20V, -16V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :7650 pF @ 15 V
Mounting Type :Surface Mount
Series :TrenchFET® Gen IV
Supplier Device Package :PowerPAK® SO-8
Mfr :Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C :100A (Tc)
Power Dissipation (Max) :57W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :SIRA60
Description :MOSFET N-CH 30V 100A PPAK SO-8
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