Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.35V @ 25µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs :14 nC @ 4.5 V
Rds On (Max) @ Id, Vgs :7.1mOhm @ 16A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss) :30 V
Vgs (Max) :±20V
Product Status :Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds :1510 pF @ 15 V
Mounting Type :Surface Mount
Series :HEXFET®
Supplier Device Package :8-PQFN (3x3)
Mfr :Infineon Technologies
Current - Continuous Drain (Id) @ 25°C :16A (Ta), 42A (Tc)
Power Dissipation (Max) :2.8W (Ta)
Technology :MOSFET (Metal Oxide)
Base Product Number :IRFH3702
Description :MOSFET N-CH 30V 16A/42A 8PQFN
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