Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.5V @ 250µA
Operating Temperature :-55°C ~ 175°C (TJ)
Package / Case :TO-220-3
Gate Charge (Qg) (Max) @ Vgs :130 nC @ 4.5 V
Rds On (Max) @ Id, Vgs :4.3mOhm @ 110A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tube
Drain to Source Voltage (Vdss) :100 V
Vgs (Max) :±16V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :11360 pF @ 50 V
Mounting Type :Through Hole
Series :HEXFET®
Supplier Device Package :TO-220AB
Mfr :Infineon Technologies
Current - Continuous Drain (Id) @ 25°C :180A (Tc)
Power Dissipation (Max) :370W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :IRLB4030
Description :MOSFET N-CH 100V 180A TO220AB
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