Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2V @ 120µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs :32.7 nC @ 10 V
Rds On (Max) @ Id, Vgs :3.9mOhm @ 23A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss) :60 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :2383 pF @ 30 V
Mounting Type :Surface Mount
Series :-
Supplier Device Package :8-PQFN (3.3x3.3)
Mfr :onsemi
Current - Continuous Drain (Id) @ 25°C :16A (Ta), 103A (Tc)
Power Dissipation (Max) :2.2W (Ta), 83W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :NTTFS3
Description :MOSFET N-CH 60V 16A/103A 8PQFN
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